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Zinc Nitride: Overview Zn3N2 gray crystal is the chemical formula for zinc nitride. It dissolves easily in hydrochloric Acid. The zinc nitride Zn3N2 is quickly converted into ammonia and zinc hydroxide in cold water. This is made by reacting zinc powder with ammonia at 500-600°C, or heating and decomposing the amino zinc. Zinc Nitride is used 1. To prepare zinc nitride sulfate film Zinc oxide (Zn3N2) is a zinc nitride with unique optical and electrical properties. It does not matter whether zinc oxide is a semiconductor with an energy band gap or one that has an indirect band. This dispute in semiconductor technology will always be the biggest. The band gap can be affected greatly by differences in growth conditions and methods, as well the difficulties of academia and industry. To prepare zinc nitride films, techniques such as magnetic sputtering and chemical vapor desposition can be used. However, most zinc nitride films have poor stability. Additionally, different optical and electrical properties are obtained from zinc oxide films. A simple, reproducible and repeatable preparation process with crystal clear quality is needed. This is the method for preparing zinc nitride films. To prepare the zinc-nitride films, the preparation process uses the atomic layers deposition technique. This method can be used to precisely manage the band gap. The membrane prepared has an excellent structure with good performance. Here are some technical solutions: The following steps can be used to make a zinc-nitride film: (1) Put the substrate in the reaction room of the equipment for atomic layer formation. (2) Add the zinc-containing pre-cursor source to the reaction chamber. (3) Allow the nitrogen-containing pre-cursor source to be deposited in the reaction chamber of an atomic layer deposition machine. Then, use plasma to ionize it. Once the nitrogen atoms have been ionized, they are partially deposited onto the substrate, forming a nitrogen/zinc covalent bond. The nitrogen precursor is then ionized. This nitrogen precursor is then sent to the atomic-layer deposition equipment for reactions. The partially deposited nitrogen atoms of the nitrogen-containing precursor are deposited in the cavity after ionization. Forge a zinc-zinc covalent bond on the substrate. Continue to repeat steps (2) through (3) in order to build the zinc oxide film layer by layer. Simple and repeatable, the method yields high-quality crystals. Once the plasma is used as the nitrogen source, it’s introduced to the atomic layer-deposition system via the plasma. The chamber temperature and vacuum degrees, cycle periods, plasma conditions and any other conditions can then be adjusted. You can adjust the band gap for the prepared zinc-nitride film. The invention is capable of producing high-quality zinc oxide films that can be adjusted to meet different optical and electrical application needs. 2. Use this to create a touchscreen cover or touch screen cover film The demand for touch screen interaction is increasing with the technological advancements and development of smart devices. This solves the issues of low coating yield, low production cost and poor efficiency. If the product is combined with a liquid-crystal display, it’s easy for bubbles to be produced and can not achieve a perfect fit. You can provide touch screen covers and touch screen films made of zinc oxide. A new touch screen cover film that uses zinc nitride as a functional layer is used. This film has low reflection and low production costs, is high in surface hardness and resists scratches and wear, can be very effective and can even eliminate step effects. It is a touch-screen cover film that includes a Zinc nitride(Zn3N2) and a Silicon nitride (4Si3N4) films. This film’s thickness ranges from 10-50nm. Zinc nitride films with a thickness greater than 50 nm will have a decrease in adhesion. Films that are less than 10 or more nm thick will not transmit light, and will therefore be difficult to achieve light-tightness. A zinc nitride-based film is functionally a layer on a black film. It has an excellent absorption rate of visible light and has a dark appearance. This touch screen cover film comprises a zinc (Zn3N2) and silicon (Si3N4) films, as well as a protective film. In sequence, the thicknesses for the zinc nitride and silicon film are respectively 10nm (10nm) and 50nm (50nm). The protective film can be a standard plastic protection film. This touch screen cover includes the touch screen substrate as well as the touchscreen cover film. The zinc nitride layer of the touchscreen cover film connects to the glass substrate. TRUNNANO is also known as. Lempotee Nano Technology Co. Ltd. is a reliable global supplier and manufacturer of chemical materials with more than 12 years experience in providing high-quality chemicals. Our company currently has a variety of products.
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