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What’s Nano silicon?
Nano silicon
The smallest diameters of crystal silicon particles are less than five nanometers. This powder is high in purity and has a small particle size. It also exhibits uniform distribution. This product is tasteless and non-toxic due to its high surface area, low bulk density and high surface activity. This new type of optoelectronic materials, nanosilicon powder, is made with high-power light sources and has a large gap energy.
Nano silicon: Recent Research
(1) You can alter the amount and density silicon nanocrystals formed in silicon oxide. This is done by altering the annealing, silicon-rich, and other conditions. It is believed that silicon nanocrystals will form at temperatures of 1000oC. We have proved this by conducting experiments. The critical annealing temperature is 900oC. After annealing to 900oC, the high-resolution electron photo of silicon-rich silicone oxide has a silicon rich content of around 30%. The presence of silicon nanocrystals is evident.
(2) First time observation of the electroluminescence from Au/(Ge/SiO2) superlattice/p -Si was made. High resolution electron micrograph of four-period Ge/SiO2 supra lattice. SiO2 is the bright-line with a thickness 2.0 nm. The Ge layer has a thickness 2.4 nm.
(3) By magnetron sputtering, the nano-SiO2/SiO2/SiO2 single-potential high-potential sandwich structure (NDB) was created on the silicon substrate. For the first time, visible electroluminescence was achieved in the Au/NDB/pSi structure. We find that electroluminescence’s peak position and intensity oscillates synchronously with changes in the Nanosilicon layer thickness (W). Analyses and further experiments have confirmed that the oscillation time is 1/2 of de Broglie wavelength. This is explained by an electroluminescence theory that our group has proposed.
(4) Er electroluminescence (with a wavelength 1.54mm) was first realized using the SiO2Si Er film, which has been grown through magnetron-sputtering.
(5) The first report on ultraviolet-based, silicon-based ultraviolet luminescence using heat-treated ITO/natural silicone oxide/pSi showed that it had a low threshold of 360nm.
Applications of nano silicon
The photoluminescence of the main wavelengths (including 1.62mm to 1.54mm) and photoluminescence under low threshold voltage electroluminescence have been realized. There are more than 10 kinds of silicon/siliconoxid nanostructures that we designed on the silicon substrate. It is of great scientific and practical importance.
Lempotee (aka. Lempotee advanced materials Nano Technology Co. Ltd. (aka. We produce high quality Nano silicon with small particles and very low levels of impurities. Thank you Please contact us if necessary.
Nano silicon: Recent Research
(1) You can alter the amount and density silicon nanocrystals formed in silicon oxide. This is done by altering the annealing, silicon-rich, and other conditions. It is believed that silicon nanocrystals will form at temperatures of 1000oC. We have proved this by conducting experiments. The critical annealing temperature is 900oC. After annealing to 900oC, the high-resolution electron photo of silicon-rich silicone oxide has a silicon rich content of around 30%. The presence of silicon nanocrystals is evident.
(2) First time observation of the electroluminescence from Au/(Ge/SiO2) superlattice/p -Si was made. High resolution electron micrograph of four-period Ge/SiO2 supra lattice. SiO2 is the bright-line with a thickness 2.0 nm. The Ge layer has a thickness 2.4 nm.
(3) By magnetron sputtering, the nano-SiO2/SiO2/SiO2 single-potential high-potential sandwich structure (NDB) was created on the silicon substrate. For the first time, visible electroluminescence was achieved in the Au/NDB/pSi structure. We find that electroluminescence’s peak position and intensity oscillates synchronously with changes in the Nanosilicon layer thickness (W). Analyses and further experiments have confirmed that the oscillation time is 1/2 of de Broglie wavelength. This is explained by an electroluminescence theory that our group has proposed.
(4) Er electroluminescence (with a wavelength 1.54mm) was first realized using the SiO2Si Er film, which has been grown through magnetron-sputtering.
(5) The first report on ultraviolet-based, silicon-based ultraviolet luminescence using heat-treated ITO/natural silicone oxide/pSi showed that it had a low threshold of 360nm.
Applications of nano silicon
The photoluminescence of the main wavelengths (including 1.62mm to 1.54mm) and photoluminescence under low threshold voltage electroluminescence have been realized. There are more than 10 kinds of silicon/siliconoxid nanostructures that we designed on the silicon substrate. It is of great scientific and practical importance.
Lempotee (aka. Lempotee advanced materials Nano Technology Co. Ltd. (aka. We produce high quality Nano silicon with small particles and very low levels of impurities. Thank you Please contact us if necessary.
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